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| SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - NOVEMBER 1998 FEATURES FCX688B C * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage Complimentary Type Partmarking Detail - FCX789A 688 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 12 12 5 10 3 1 2 -55 to +150 UNIT V V V A A W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX688B ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) Min 12 12 5 0.1 0.1 40 60 180 350 400 1.1 1.0 500 400 100 150 200 40 40 500 MHz pF pF ns ns Typ Max UNIT V V V A A mV mV mV mV mV V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=9V VEB=4V IC=0.1A, IB=1mA * IC=0.1A, IB=0.5mA * IC=1A, IB=10mA * IC=3A, IB=10mA * IC=4A, IB=50mA * IC=3A, IB=20mA * IC=3A, VCE=2V * IC=100mA, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB1=IB2=50mA VCC=10V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX688B TYPICAL CHARACTERISTICS IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25C 0.8 -55C +25C +100C +175C 0.8 IC/IB=100 0.6 0.6 0.4 0.4 0.2 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) IC VCE(sat) v IC VCE(sat) IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 +100C +25C -55C VCE=2V 1.5K 1.6 1.4 1.2 1K 1.0 0.8 500 0.6 0.4 0.2 -55C +25C +100C +175C IC/IB=100 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC IC VBE(sat) v IC IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 -55C +25C +100C +175C 10 VCE=2V 1 DC 1s 100ms 10ms 1ms 100us 0.1 0.01 0.1 1 10 0.01 100m 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC IC Safe Operating Area |
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